Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

Journal Article · Sat Aug 15 04:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4928386· OSTI ID:22492295

Ding, Jian Ning; Huang, Yu Kai ^[1]

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1. Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China)

Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

• OSTI ID: 22492295
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 8 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTROLYTES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
NANOSTRUCTURES
NEURAL NETWORKS
PHOSPHORUS COMPOUNDS
PROTONS
SILICA
SILICON OXIDES
TEMPERATURE DEPENDENCE
TRANSISTORS
ZINC OXIDES