Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing
- Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510 (Japan)
We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10{sup 4}. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.
- OSTI ID:
- 22492170
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 11 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
H-terminated diamond field effect transistor with ferroelectric gate insulator
Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers