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Title: Structural properties of a-Si films and their effect on aluminum induced crystallization

Abstract

In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.

Authors:
;  [1]; ;  [1];  [2];  [3]
  1. Center for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Ankara 06800 (Turkey)
  2. (Turkey)
  3. Central Laboratory, Middle East Technical University, Ankara 06800 (Turkey)
Publication Date:
OSTI Identifier:
22492127
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; ALUMINIUM; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CRYSTALLIZATION; DILUTION; ELECTRON BEAMS; EVAPORATION; FILMS; FOURIER TRANSFORMATION; GRAIN SIZE; HYDROGEN; INFRARED SPECTRA; PLASMA; RAMAN SPECTROSCOPY; SILICON

Citation Formats

Tankut, Aydin, Ozkol, Engin, Karaman, Mehmet, Turan, Rasit, Micro and Nanotechnology Graduate Program, Middle East Technical University, Ankara 06800, and Canli, Sedat. Structural properties of a-Si films and their effect on aluminum induced crystallization. United States: N. p., 2015. Web. doi:10.1063/1.4933193.
Tankut, Aydin, Ozkol, Engin, Karaman, Mehmet, Turan, Rasit, Micro and Nanotechnology Graduate Program, Middle East Technical University, Ankara 06800, & Canli, Sedat. Structural properties of a-Si films and their effect on aluminum induced crystallization. United States. doi:10.1063/1.4933193.
Tankut, Aydin, Ozkol, Engin, Karaman, Mehmet, Turan, Rasit, Micro and Nanotechnology Graduate Program, Middle East Technical University, Ankara 06800, and Canli, Sedat. Thu . "Structural properties of a-Si films and their effect on aluminum induced crystallization". United States. doi:10.1063/1.4933193.
@article{osti_22492127,
title = {Structural properties of a-Si films and their effect on aluminum induced crystallization},
author = {Tankut, Aydin and Ozkol, Engin and Karaman, Mehmet and Turan, Rasit and Micro and Nanotechnology Graduate Program, Middle East Technical University, Ankara 06800 and Canli, Sedat},
abstractNote = {In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size.},
doi = {10.1063/1.4933193},
journal = {AIP Advances},
issn = {2158-3226},
number = 10,
volume = 5,
place = {United States},
year = {2015},
month = {10}
}