Preliminary design and optimization of a G-band extended interaction oscillator based on a pseudospark-sourced electron beam

Journal Article · Wed Jul 15 04:00:00 EDT 2015 · Physics of Plasmas

DOI:https://doi.org/10.1063/1.4926512· OSTI ID:22490978

He, W.; Zhang, L.; Yin, H.; Cross, A. W. ^[1]

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1. Department of Physics, Scottish Universities Physics Alliance, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

The design and simulation of a G-band extended interaction oscillator (EIO) driven by a pseudospark-sourced electron beam is presented. The characteristic of the EIO and the pseudospark-based electron beam were studied to enhance the performance of the newly proposed device. The beam-wave interaction of the EIO can be optimized by choosing a suitable pseudospark discharging voltage and by widening the operating voltage region of the EIO circuit. Simulation results show that a peak power of over 240 W can be achieved at G-band using a pseudospark discharge voltage of 41 kV.

• OSTI ID: 22490978
• Journal Information: Physics of Plasmas, Journal Name: Physics of Plasmas Journal Issue: 7 Vol. 22; ISSN PHPAEN; ISSN 1070-664X
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
COMPUTERIZED SIMULATION
DESIGN
ELECTRIC POTENTIAL
ELECTRON BEAMS
INTERACTIONS
OPTIMIZATION
OSCILLATORS
PEAK LOAD
PERFORMANCE