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Electric field-controlled magnetization in bilayered magnetic films for magnetoelectric memory

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4926875· OSTI ID:22490792

Bilayered magnetic films (Co{sub 50}Fe{sub 50} (CoFe)/Metglas) were RF sputtered on both (001)-oriented and (011)-oriented PMN-PT (lead magnesium niobate-lead titanate) substrates. Electric field-controlled magnetization changes were observed in all these samples: 65 nm CoFe/24 nm Metglas/(001) PMN-PT, 65 nm CoFe/24 nm Metglas/(011) PMN-PT, and 30 nm CoFe/12 nm Metglas/(011) PMN-PT. The maximum magnetic remanence ratio change (ΔM{sub r}/M{sub s}) was 46% for CoFe/Metglas/(001) PMN-PT. In this heterostructure, the electric-field created two new non-volatile switchable remanence states and the as-grown remanence state was altered permanently. High-resolution transmission electron microscopy images show a sharp and smooth interface between Metglas and substrate and conversely a rougher interface was observed between Metglas and CoFe films. In the 30 nm CoFe/12 nm Metglas/(011) PMN-PT sample, a large ΔM{sub r}/M{sub s} of 80% along the [100] direction was measured, while the ΔM{sub r}/M{sub s} along the [01-1] direction was 60% at the applied electric field of 5 kV/cm, corresponding to a giant magnetoelectric coupling constant α = μ{sub o}ΔM{sub r}/E = 2.9 × 10{sup −6} s/m.

OSTI ID:
22490792
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English