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Title: Growth and spin-wave properties of thin Y{sub 3}Fe{sub 5}O{sub 12} films on Si substrates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4926475· OSTI ID:22490774
;  [1];  [2]
  1. Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus, Minsk 220072 (Belarus)
  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)

We describe synthesis of submicron Y{sub 3}Fe{sub 5}O{sub 12} (YIG) films sputtered on Si substrates and present results of the investigation of ferromagnetic resonance (FMR) and spin waves in YIG/SiO{sub 2}/Si structures. It is found that decrease of the annealing time leads to essential reduction of the FMR linewidth ΔH and, consequently, to reduction of relaxation losses of spin waves. Spin-wave propagation in in-plane magnetized YIG/SiO{sub 2}/Si structures is studied. We observe the asymmetry of amplitude-frequency characteristics of the Damon-Eshbach spin waves caused by different localizations of spin waves at the free YIG surface and at the YIG/SiO{sub 2} interface. Growth of the generating microwave power leads to spin-wave instability and changes amplitude-frequency characteristics of spin waves.

OSTI ID:
22490774
Journal Information:
Journal of Applied Physics, Vol. 118, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English