Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]
Journal Article
·
· Journal of Applied Physics
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
- School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
No abstract prepared.
- OSTI ID:
- 22490769
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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