Growth and characterization of (110) InAs quantum well metamorphic heterostructures

Journal Article · Sun Jun 28 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4922985· OSTI ID:22490740

Katz, Michael B.; Twigg, Mark E.; Mack, Shawn; Bennett, Brian R. ^[1]; Shabani, Javad ^[2]; Palmstrøm, Chris J. ^[2]

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1. U.S. Naval Research Laboratory Washington DC 20375 (United States)
2. California NanoSystems Institute, University of California, Santa Barbara, California 93106 (United States)

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in the quantum Hall regime.

• OSTI ID: 22490740
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPOSITION
DISLOCATIONS
ELECTRON MOBILITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
NUCLEATION
QUANTUM WELLS
SPIN
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS