Current-perpendicular-to-the-plane magnetoresistance from large interfacial spin-dependent scattering between Co{sub 50}Fe{sub 50} magnetic layer and In-Zn-O conductive oxide spacer layer
Journal Article
·
· Journal of Applied Physics
- San Jose Research Center, HGST, a Western Digital company, 3403 Yerba Buena Road, San Jose, California 95135 (United States)
We have investigated electrically conductive indium-zinc-oxide (IZO) deposited by magnetron sputtering as spacer layer for current-perpendicular-to-the-plane giant magnetoresistance sensor devices. Spin-valves with a Co{sub 50}Fe{sub 50}/IZO/Co{sub 50}Fe{sub 50} trilayer showed resistance-area product (RA) ranging from 110 to 250 mΩ μm{sup 2}, significantly larger than all-metal structures with Ag or Cu spacers (∼40 mΩ μm{sup 2}). Magnetoresistance ratios (ΔR/R) of 2.5% to 5.5% depending on the IZO spacer thickness (1.5–6.0 nm), corresponding to ΔRA values from 3 to 13 mΩ μm{sup 2}, were obtained. The values of ΔRA with the IZO spacers and Co{sub 50}Fe{sub 50} magnetic layers were significantly larger than those with conventional metal spacers and Co{sub 50}Fe{sub 50} magnetic layers (∼1–2 mΩ μm{sup 2}). The dependence of ΔRA on the magnetic layer thickness suggests that the larger ΔRA obtained with IZO spacer is due to a large interfacial spin-dependent scattering caused by the large specific resistance at the Co{sub 50}Fe{sub 50}/IZO interface. From structural characterization by TEM and the observed dependence of the RA dispersion on device size, the electric current flowing through the IZO spacer is thought to be laterally uniform, similar to normal metal spacers.
- OSTI ID:
- 22490723
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 24 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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