Silicon/HfO{sub 2} interface: Effects of proton irradiation

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918148· OSTI ID:22490552

Maurya, Savita; Radhakrishna, M. ^[1]

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1. Division of Electronics and Microelectronics, IIIT-A, Devghat, Jhalwa, Allahabad-211012 (India)

Substrate oxide interfaces are of paramount importance in deciding the quality of the semiconductor devices. In this work we have studied how 200 keV proton irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide on silicon substrate. Pre- and post-irradiation electrical measurements are used to quantify the effect of proton irradiation for varying electrode geometries. Proton irradiation introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface. The gate current is not very much affected under positive injection since the induced positive charge is compensated by the injected electrons. Current voltage characteristics under negative bias get affected by the proton irradiation.

• OSTI ID: 22490552
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ELECTRIC POTENTIAL
ELECTRODES
ELECTRONS
HAFNIUM OXIDES
INTERFACES
IRRADIATION
KEV RANGE
LAYERS
PHYSICAL RADIATION EFFECTS
PROTONS
SEMICONDUCTOR DEVICES
SILICON
SUBSTRATES