Thermoelectric power of supported graphene - An iterative approach
Thermoelectric power, S, of graphene supported on SiO{sub 2} substrate is studied for 10K < T < 400K within the framework of Boltzmann transport formalism by an iterative method. Numerical calculations of diffusion thermopower, S{sub d}, as a function of temperature, are presented assuming the electrons to be scattered by impurities, vacancies, surface roughness, acoustic phonons, inelastic optical phonons and surface polar optical phonons. For the range of temperatures considered, S{sub d} is found to be dominated by impurities for T < 40K and by acoustic phonon and vacancy scatterings for T > 40K. The optical phonons are found to influence S{sub d} for T > 300K. Our calculations, assuming the drag component to be negligible, obtain good agreement with the recent experimental data.
- OSTI ID:
- 22490497
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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