Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation
Journal Article
·
· AIP Conference Proceedings
- Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)
- Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)
Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.
- OSTI ID:
- 22490425
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CUBIC LATTICES
ELECTRIC CONDUCTIVITY
ENERGY GAP
IRRADIATION
LAYERS
MEV RANGE
MULTICHARGED IONS
NANOSTRUCTURES
NICKEL IONS
OPTICAL PROPERTIES
POLYCRYSTALS
SENSORS
SPECTROPHOTOMETRY
THIN FILMS
VISIBLE RADIATION
X-RAY DIFFRACTION
ZINC OXIDES
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CUBIC LATTICES
ELECTRIC CONDUCTIVITY
ENERGY GAP
IRRADIATION
LAYERS
MEV RANGE
MULTICHARGED IONS
NANOSTRUCTURES
NICKEL IONS
OPTICAL PROPERTIES
POLYCRYSTALS
SENSORS
SPECTROPHOTOMETRY
THIN FILMS
VISIBLE RADIATION
X-RAY DIFFRACTION
ZINC OXIDES