Laser induced optical bleaching in Ge{sub 12}Sb{sub 25}S{sub 63} chalcogenide thin film
- Department of Physics, Utkal University, Bhubaneswar-751004, Odisha (India)
- Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)
Photo induced effects of Ge{sub 12}Sb{sub 25}S{sub 63} films illuminated with 532 nm laser light is investigated from transmission spectra measured by FTIR spectroscopy. The material exhibit photo bleaching (PB) when exposed to band gap laser for a prolonged time in vacuum. The PB is ascribed to structural changes inside the film as well as surface photo oxidation. The amorphous nature of thin films was detected by X-ray diffraction. The chemical composition of the deposited thin films was examined by Energy Dispersive X-ray Analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on inverse synthesis method, and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that, the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman spectra analysis also supports the optical changes.
- OSTI ID:
- 22490363
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTRA
ABSORPTION SPECTROSCOPY
ANTIMONIDES
BLEACHING
CHEMICAL COMPOSITION
FOURIER TRANSFORMATION
GERMANIUM SULFIDES
INFRARED SPECTRA
OSCILLATORS
OXIDATION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
REFRACTIVE INDEX
SYNTHESIS
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY