ZnO nanowall network grown by chemical vapor deposition technique

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4917825· OSTI ID:22490339

Mukherjee, Amrita; Dhar, Subhabrata ^[1]

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1. Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

• OSTI ID: 22490339
• Journal Information: AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CROSS SECTIONS
CRYSTAL STRUCTURE
EMISSION SPECTRA
FILMS
NANOSTRUCTURES
PHOTOLUMINESCENCE
REDUCTION
SAPPHIRE
X-RAY DIFFRACTION
ZINC OXIDES