Atomic layer deposition of NiS and its application as cathode material in dye sensitized solar cell

Journal Article · Fri Jan 15 04:00:00 EST 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4938078· OSTI ID:22489774

Mahuli, Neha ^[1]

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1. Center for Research in Nanotechnology and Sciences, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

Nickel sulfide (NiS) is grown by atomic layer deposition (ALD) using sequential exposures of bis(2,2,6,6-tetramethylheptane-3,5-dionate)nickel(II) [Ni(thd){sub 2}] and hydrogen sulfide (H{sub 2}S) at 175 °C. Complementary combinations of in situ and ex situ characterization techniques are used to understand the deposition chemistry and the nature of film growth. The saturated growth rate of ca. 0.21 Å per ALD cycle is obtained, which is constant within the ALD temperature window (175–250 °C). As deposited films on glass substrates are found polycrystalline without any preferred orientation. Electrical transport measurement reveals degenerative/semimetallic characteristics with a carrier concentration of ca. 9 × 10{sup 22} cm{sup −3} at room temperature. The ALD grown NiS thin film demonstrates high catalytic activity for the reduction of I{sup −}/I{sub 3}{sup −} electrolyte that opens its usage as cost-effective counter electrode in dye sensitized solar cells, replacing Pt.

• OSTI ID: 22489774
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 1 Vol. 34; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
CATHODES
DYES
GRAIN ORIENTATION
HYDROGEN SULFIDES
NICKEL
NICKEL SULFIDES
SOLAR CELLS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS