Influence of Ce doping on structural and photoelectric properties of CuInS{sub 2} thin films

Journal Article · Mon Sep 21 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931156· OSTI ID:22489511

Zhu, Jun; Xiao, Lingling; Ding, Tiezhu; Wang, Yanlai; Fan, Yue ^[1]

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1. School of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, Hohhot 010021 (China)

Cerium doped CuInS{sub 2} thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn{sub 1−x}Ce{sub x}S{sub 2} samples are of good crystallinity and crystallize with chalcopyrite structure when sintering at 550 °C. The presence of Ce{sup 3+} in host material was conformed by X-ray photoelectron spectroscopy. Two subband photon absorption peaks were observed at 1710 nm (0.73 eV) and 1955 nm (0.63 eV) in the UV–Vis–NIR absorption spectrum. This behavior could suggest that an intermediate band forms in the forbidden band of CuInS{sub 2} semiconductor due to cerium incorporation. The optical bandgap of CuIn{sub 1−x}Ce{sub x}S{sub 2} films was tuned in the range of 1.38 eV to 1.23 eV with increasing cerium content. And the electrical conductivity could be improved if doped moderate cerium content, especially x = 0.1.

• OSTI ID: 22489511
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ABSORPTION SPECTRA
CERIUM
CERIUM IONS
CHALCOPYRITE
COPPER SULFIDES
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
INDIUM SULFIDES
PHOTONS
POWDER METALLURGY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SINTERING
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY