Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide
- Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)
We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.
- OSTI ID:
- 22489296
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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