Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

Journal Article · Mon Jan 04 04:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939591· OSTI ID:22489253

Yu, C.; Li, J.; Song, X. B.; Liu, Q. B.; Cai, S. J.; He, Z. Z. ^[1]

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1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)

Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100 nm and 200 nm are fabricated and characterized. The 100 nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I{sub ds} of 4.2 A/mm, and a peak transconductance g{sub m} of 2880 mS/mm. Intrinsic current-gain cutoff frequency f{sub T} of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.

• OSTI ID: 22489253
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER MOBILITY
ELECTRONIC EQUIPMENT
EPITAXY
FIELD EFFECT TRANSISTORS
GHZ RANGE
GRAPHENE
LAYERS
LENGTH
SEMICONDUCTOR MATERIALS
SILICON CARBIDES