Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films
- Leibniz-Institut für Oberflächenmodifizierung, Permoserstrasse 15, 04318 Leipzig (Germany)
- Imec, Kapeldreef 75, 3001 Leuven (Belgium)
- Department of Inorganic and Physical Chemistry, Centre for Ordered Materials, Organometallics and Catalysis (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium)
The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH{sub 3} (methyl) bonds, the Si-CH{sub 2}-Si (methylene) bonds are not affected by 5.6 eV irradiation. On the other hand, the concentration of the Si-CH{sub 2}-CH{sub 2}-Si (ethylene) groups decreases during such UV exposure. More significant difference in alkylene reduction is observed when the films are exposed to VUV (7.2 eV). The ethylene groups are depleted by more than 75% while only about 40% methylene and methyl groups loss is observed. The different sensitivity of bridging groups to VUV light should be taken into account during the development of curing and plasma etch processes of low-k materials based on periodic mesoporous organosilicas and oxycarbosilanes. The experimental results are qualitatively supported by ab-initio quantum-chemical calculations.
- OSTI ID:
- 22489249
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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