High temperature coefficient of resistance for a ferroelectric tunnel junction

Journal Article · Mon Aug 10 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928540· OSTI ID:22489093

Zhao, Xiaolin; Tian, Bobo; Liu, Bolu; Wang, Xudong; Huang, Hai ^[1]; Wang, Jianlu; Zou, Yuhong; Sun, Shuo; Lin, Tie; Han, Li; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao ^[1]

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1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China)

An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.

• OSTI ID: 22489093
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FERROELECTRIC MATERIALS
FILMS
INFRARED RADIATION
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
TUNNEL JUNCTIONS