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Title: Ferromagnetism in proton irradiated 4H-SiC single crystal

Abstract

Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Authors:
; ; ;  [1];  [2]; ; ;  [1]
  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22488550
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 5; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FERROMAGNETISM; IRRADIATION; MAGNETIZATION; MONOCRYSTALS; PROTONS; RADIATION DOSES; SATURATION; SILICON CARBIDES

Citation Formats

Zhou, Ren-Wei, Wang, Hua-Jie, Chen, Wei-Bin, Li, Fei, University of Chinese Academy of Sciences, Beijing 100049, Liu, Xue-Chao, E-mail: xcliu@mail.sic.ac.cn, Zhuo, Shi-Yi, and Shi, Er-Wei. Ferromagnetism in proton irradiated 4H-SiC single crystal. United States: N. p., 2015. Web. doi:10.1063/1.4919611.
Zhou, Ren-Wei, Wang, Hua-Jie, Chen, Wei-Bin, Li, Fei, University of Chinese Academy of Sciences, Beijing 100049, Liu, Xue-Chao, E-mail: xcliu@mail.sic.ac.cn, Zhuo, Shi-Yi, & Shi, Er-Wei. Ferromagnetism in proton irradiated 4H-SiC single crystal. United States. doi:10.1063/1.4919611.
Zhou, Ren-Wei, Wang, Hua-Jie, Chen, Wei-Bin, Li, Fei, University of Chinese Academy of Sciences, Beijing 100049, Liu, Xue-Chao, E-mail: xcliu@mail.sic.ac.cn, Zhuo, Shi-Yi, and Shi, Er-Wei. Wed . "Ferromagnetism in proton irradiated 4H-SiC single crystal". United States. doi:10.1063/1.4919611.
@article{osti_22488550,
title = {Ferromagnetism in proton irradiated 4H-SiC single crystal},
author = {Zhou, Ren-Wei and Wang, Hua-Jie and Chen, Wei-Bin and Li, Fei and University of Chinese Academy of Sciences, Beijing 100049 and Liu, Xue-Chao, E-mail: xcliu@mail.sic.ac.cn and Zhuo, Shi-Yi and Shi, Er-Wei},
abstractNote = {Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.},
doi = {10.1063/1.4919611},
journal = {AIP Advances},
issn = {2158-3226},
number = 4,
volume = 5,
place = {United States},
year = {2015},
month = {4}
}