Ferromagnetism in proton irradiated 4H-SiC single crystal
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)
Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.
- OSTI ID:
- 22488550
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 4 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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