Photonic crystal cavities with metallic Schottky contacts
- Physics Department and Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Straße 100, Paderborn 33098 (Germany)
- Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, Bochum D-44780 (Germany)
We report about the fabrication and analysis of high Q photonic crystal cavities with metallic Schottky-contacts. The structures are based on GaAs n-i membranes with an InGaAs quantum well in the i-region and nanostructured low ohmic metal top-gates. They are designed for photocurrent readout within the cavity and fast electric manipulations. The cavity structures are characterized by photoluminescence and photocurrent spectroscopy under resonant excitation. We find strong cavity resonances in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature dependent photocurrent measurements in the region between 4.5 K and 310 K show an exponential enhancement of the photocurrent signal and an external quantum efficiency up to 0.26.
- OSTI ID:
- 22486369
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electroluminescence from a forward-biased Schottky barrier diode on modulation Si {delta}-doped GaAs/InGaAs/AlGaAs heterostructure
On the ohmicity of Schottky contacts
Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m
Journal Article
·
Mon Jun 18 00:00:00 EDT 2001
· Applied Physics Letters
·
OSTI ID:40204533
On the ohmicity of Schottky contacts
Journal Article
·
Wed Jun 15 00:00:00 EDT 2016
· Semiconductors
·
OSTI ID:22645504
Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m
Journal Article
·
Thu Nov 14 23:00:00 EST 2013
· Semiconductors
·
OSTI ID:22210438