Plasmon-mediated energy relaxation in graphene

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4938760· OSTI ID:22486303

Ferry, D. K. ^[1]; Somphonsane, R. ^[2]; Ramamoorthy, H.; Bird, J. P. ^[3]

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1. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)
2. Department of Physics, King Mongkut's Institute of Technology, Ladkrabang, Bangkok 10520 (Thailand)
3. Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500 (United States)

Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

• OSTI ID: 22486303
• Journal Information: Applied Physics Letters, Vol. 107, Issue 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIERS
ELECTRON-PHONON COUPLING
GRAPHENE
PLASMONS
RELAXATION
SEMICONDUCTOR MATERIALS