A silicon-nanowire memory driven by optical gradient force induced bistability

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939114· OSTI ID:22486299

Dong, B. ^[1]; Gu, Y. D.; Kwong, D. L. ^[2]; Chin, L. K.; Ng, G. I.; Ser, W. ^[1]; Huang, J. G. ^[1]; Yang, Z. C. ^[3]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
2. Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore)
3. School of Electronics Engineering and Computer Science, Peking University, Beijing 100871 (China)

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

• OSTI ID: 22486299
• Journal Information: Applied Physics Letters, Vol. 107, Issue 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEFORMATION
NANOWIRES
QUANTUM COMPUTERS
RESONATORS
RINGS
SILICON
VISIBLE RADIATION