(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates
We demonstrate semipolar InGaN single-quantum-well light emitting diodes (LEDs) in the green, yellow-green, yellow and amber spectral region. The LEDs are grown on our overgrown semipolar (11-22) GaN on micro-rod array templates, which are fabricated on (11-22) GaN grown on m-plane sapphire. Electroluminescence measurements on the (11-22) green LED show a reduced blue-shift in the emission wavelength with increasing driving current, compared to a reference commercial c-plane LED. The blue-shifts for the yellow-green and yellow LEDs are also significantly reduced. All these suggest an effective suppression in quantum confined Stark effect in our (11-22) LEDs. On-wafer measurements yield a linear increase in the light output with the current, and external quantum efficiency demonstrates a significant improvement in the efficiency-droop compared to a commercial c-plane LED. Electro-luminescence polarization measurements show a polarization ratio of about 25% in our semipolar LEDs.
- OSTI ID:
- 22486294
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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