Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure

Journal Article · Mon Nov 09 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935554· OSTI ID:22486048

Chaturvedi, P.; Chouksey, S.; Banerjee, D.; Ganguly, S.

We have demonstrated a type-II band-aligned heterostructure between pulsed laser deposited topological insulator bismuth telluride and metal organic-chemical-vapour deposited GaN on a sapphire substrate. The heterostructure shows a large valence band-offset of 3.27 eV as determined from x-ray photoelectron spectroscopy, which is close to the bandgap of GaN (3.4 eV). Further investigation using x-ray diffraction, Raman spectroscopy, and energy-dispersive x-ray spectrum reveals the stoichiometric and material properties of bismuth telluride on GaN. Steady state photon emission from GaN is found to be modulated by the charge transfer process due to diffusion across the junction. The time constant involved with the charge transfer process is found to be 0.6 ns by transient absorption spectroscopy. The heterostructure can be used for designing devices with different functionalities and improving the performance of the existing devices on GaN.

• OSTI ID: 22486048
• Journal Information: Applied Physics Letters, Vol. 107, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION SPECTROSCOPY
BISMUTH TELLURIDES
CARRIERS
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
ORGANOMETALLIC COMPOUNDS
PHOTON EMISSION
PHOTONS
RAMAN SPECTROSCOPY
SAPPHIRE
TOPOLOGY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTRA