Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy
- Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, 7 Avenue Jean Capelle, 69621 Villeurbanne (France)
- Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory, 06560 Valbonne Sophia Antipolis (France)
- Groupe d'étude de la matière condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats Unis, 78035 Versailles (France)
Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly contrasted SCM signals were obtained between the ZnO layers with different Ga densities. Through comparison with dopant depth profiles from secondary ion mass spectroscopy measurement, it is demonstrated that SCM is able to distinguish carrier concentrations at all levels of the samples (from 2 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3}). The good agreement of the results from the two techniques indicates that SCM can be a useful tool for two dimensional carrier profiling at nanoscale for ZnO nanostructure development. As an example, residual carrier concentration inside the non-intentionally doped buffer layer was estimated to be around 2 × 10{sup 16 }cm{sup −3} through calibration analysis.
- OSTI ID:
- 22486046
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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