Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

Journal Article · Mon Nov 09 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4935611· OSTI ID:22486034

Baik, Chan-Wook; Ahn, Ho Young; Kim, Yongsung; Lee, Jooho; Hong, Seogwoo; Lee, Sang Hun; Choi, Jun Hee; Kim, Sunil; Kim, Jong Min; Hwang, Sungwoo ^[1]; Jeon, So-Yeon; Yu, SeGi ^[2]; Collins, George; Read, Michael E.; Lawrence Ives, R. ^[3]

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1. Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of)
2. Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of)
3. Calabazas Creek Research, Inc., San Mateo, California 94404-1010 (United States)

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.

• OSTI ID: 22486034
• Journal Information: Applied Physics Letters, Vol. 107, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMPLIFICATION
ASPECT RATIO
BEAM EMITTANCE
ELECTRON GUNS
IONS
OSCILLATORS
SILICON
SPACE CHARGE
SUBSTRATES