Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

Journal Article · Mon Jul 13 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926495· OSTI ID:22483202

Tari, Alireza; Lee, Czang-Ho; Wong, William S. ^[1]

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1. Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

• OSTI ID: 22483202
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
DEPOSITS
DIELECTRIC MATERIALS
DIFFUSION
GALLIUM
HYDROGEN
INDIUM
LAYERS
PHOTOLUMINESCENCE
PLASMA
SILICON OXIDES
SPECTROSCOPY
THIN FILMS
TRANSISTORS
X RADIATION
ZINC OXIDES