Bulk- and layer-heterojunction phototransistors based on poly [2-methoxy-5-(2′-ethylhexyloxy-p-phenylenevinylene)] and PbS quantum dot hybrids
- Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China)
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China)
The responsivity (R) of a thin film photodetector is proportional to the product of its photo-induced carrier density (n) and mobility (μ). However, when choosing between layer heterojunction (LH) and bulk heterojunction (BH) field-effect phototransistors (FEpTs), it is still unclear which of the two device structures is more conducive to photodetection. A comparison study is performed on the two structures based on polymer and PbS quantum dot hybrids. Both devices exhibit ambipolar behavior, with μ{sub E} ≈ μ{sub H} = 3.7 cm{sup 2} V{sup −1} s{sup −1} for BH-FEpTs and μ{sub H} = 36 cm{sup 2} V{sup −1} s{sup −1} and μ{sub E} = 52 cm{sup 2} V{sup −1} s{sup −1} for LH-FEpTs. Because of the improvements in μ and the channel order degree (α), the responsivity of LH-FEpTs is as high as 10{sup 1 }A/W, which is as much as two orders of magnitude higher than that of BH-FEpTs (10{sup −1}A/W) under the same conditions. Although the large area of the BH improves both the exciton separation degree (β) and n in the BH-FEpT, the lack of an effective transport mechanism becomes the main constraint on high device responsivity. Therefore, LH-FEpTs are better candidates for use as photo detectors, and a “three-high” principle of high α, β, and μ is found to be required for high responsivity.
- OSTI ID:
- 22483099
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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