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Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4932943· OSTI ID:22482241
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  1. Laboratoire Charles Coulomb (L2C), UMR CNRS 5221, Universite Montpellier, 34095 Montpellier (France)
  2. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy)
  3. Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod 603950 (Russian Federation)
  4. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk 630090 (Russian Federation)

We report on terahertz photoconductivity under magnetic field up to 16 T of field effect transistor based on HgTe quantum well (QW) with an inverted band structure. We observe pronounced cyclotron resonance and Shubnikov-de Haas-like oscillations, indicating a high mobility electron gas in the transistor channel. We discover that nonlinearity of the transistor channel allows for observation of characteristic features in photoconductivity at critical magnetic field corresponding to the phase transition between topological quantum spin Hall and trivial quantum Hall states in HgTe QW. Our results pave the way towards terahertz topological field effect transistors.

OSTI ID:
22482241
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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