Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932385· OSTI ID:22482178

Ohno, Takeo ^[1]; Nakayama, Daiki ^[2]; Samukawa, Seiji ^[1]

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1. WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
2. Institute of Fluid Science (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

To obtain a high-quality Germanium (Ge) metal–oxide–semiconductor structure, a Ge gate stacked structure was fabricated using neutral beam post-oxidation. After deposition of a 1-nm-thick Al metal film on a Ge substrate, simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 29% GeO{sub 2} content was obtained by controlling the acceleration bias power of the neutral oxygen beam. In addition, the fabricated AlO{sub x}/GeO{sub x}/Ge structure achieved a low interface state density of less than 1 × 10{sup 11 }cm{sup −2 }eV{sup −1} near the midgap.

• OSTI ID: 22482178
• Journal Information: Applied Physics Letters, Vol. 107, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BEAMS
DEPOSITION
FILMS
GERMANATES
GERMANIUM
GERMANIUM OXIDES
INTERFACES
OXIDATION
OXYGEN
SEMICONDUCTOR MATERIALS
SUBSTRATES