A WSe{sub 2}/MoSe{sub 2} heterostructure photovoltaic device
- Photonics Laboratory, ETH Zürich, Zürich 8092 (Switzerland)
- National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2}/MoS{sub 2} heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory.
- OSTI ID:
- 22482142
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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