Strongly compressed Bi (111) bilayer films on Bi{sub 2}Se{sub 3} studied by scanning tunneling microscopy

Journal Article · Mon Sep 21 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931390· OSTI ID:22482114

Zhang, K. F.; Yang, Fang; Song, Y. R. ^[1]; Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng ^[1]

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1. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)

Ultra-thin Bi films show exotic electronic structure and novel quantum effects, especially the widely studied Bi (111) film. Using reflection high-energy electron diffraction and scanning tunneling microscopy, we studied the structure and morphology evolution of Bi (111) thin films grown on Bi{sub 2}Se{sub 3}. A strongly compressed, but quickly released in-plane lattice of Bi (111) is found in the first three bilayers. The first bilayer of Bi shows a fractal growth mode with flat surface, while the second and third bilayer show a periodic buckling due to the strong compression of the in-plane lattice. The lattice slowly changes to its bulk value with further deposition of Bi.

• OSTI ID: 22482114
• Journal Information: Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BISMUTH SELENIDES
BUCKLING
DEPOSITION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
FRACTALS
LAYERS
MORPHOLOGY
REFLECTION
SCANNING TUNNELING MICROSCOPY
SURFACES
THIN FILMS