Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Journal Article · Mon Sep 07 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930909· OSTI ID:22482053

Ward, Daniel R.; Thorgrimsson, Brandur; Savage, D. E.; Friesen, Mark; Coppersmith, S. N.; Prance, J. R. ^[1]; Gamble, John King; Nielsen, Erik ^[2]; Saraiva, A. L. ^[3]

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1. Department of Physics, Lancaster University, Bailrigg, Lancaster LA1 4YB (United Kingdom)
2. Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro (Brazil)

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

• OSTI ID: 22482053
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRONS
GERMANIUM SILICIDES
IMPURITIES
QUANTUM DOTS
QUANTUM WELLS
SILICON
WAVE FUNCTIONS