Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

Journal Article · Mon Sep 07 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930578· OSTI ID:22482042

Clément, P. -Y.; Chshiev, M.; Diény, B. ^[1]; Ducruet, C. ^[2]; Vila, L. ^[3]

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1. Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France)
2. Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France)
3. Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

• OSTI ID: 22482042
• Journal Information: Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALIGNMENT
AMPLITUDES
DEGREES OF FREEDOM
DESIGN
EFFICIENCY
ELECTRODES
MAGNETIZATION
MODULATION
RANDOMNESS
SPIN
SPIN ORIENTATION
TORQUE
TUNNEL EFFECT