Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 2V4 (Canada)
Atomic layer deposition (ALD) relies on a sequence of self-limiting surface reactions for thin film growth. The effect of non-ALD side reactions, from insufficient purging between pulses and from precursor self-decomposition, on film growth is well known. In this article, precursor condensation within an ALD valve is described, and the effect of the continuous precursor source from condensate evaporation on ALD growth is discussed. The influence of the ALD valve temperature on growth and electrical resistivity of ZrN plasma enhanced ALD (PEALD) films is reported. Increasing ALD valve temperature from 75 to 95 °C, with other process parameters being identical, decreased both the growth per cycle and electrical resistivity (ρ) of ZrN PEALD films from 0.10 to 0.07 nm/cycle and from 560 to 350 μΩ cm, respectively. Our results show that the non-ALD growth resulting from condensate accumulation is eliminated at valve temperatures close to the pressure corrected boiling point of precursor.
- OSTI ID:
- 22479719
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 33; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H{sub 2} + 95% N{sub 2}) plasma
Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
Journal Article
·
Fri May 15 00:00:00 EDT 2015
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:22392176
Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
Journal Article
·
Thu Sep 15 00:00:00 EDT 2016
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:22592833
Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
Journal Article
·
Fri Jul 15 00:00:00 EDT 2016
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:22592871