Study on spatial distribution of plasma parameters in a magnetized inductively coupled plasma

Journal Article · Wed Jul 15 04:00:00 EDT 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4923027· OSTI ID:22479705

Cheong, Hee-Woon; Lee, Woohyun; Kim, Ji-Won; Whang, Ki-Woong ^[1]; Kim, Hyuk ^[2]; Park, Wanjae ^[3]

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1. Plasma Laboratory, Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
2. Samsung Electronics Co., Banwol-dong, Hwaseong 445-701 (Korea, Republic of)
3. Tokyo Electron Miyagi Ltd., Taiwa-cho, Kurokawa-gun, Miyagi 981-3629 (Japan)

Spatial distributions of various plasma parameters such as plasma density, electron temperature, and radical density in an inductively coupled plasma (ICP) and a magnetized inductively coupled plasma (M-ICP) were investigated and compared. Electron temperature in between the rf window and the substrate holder of M-ICP was higher than that of ICP, whereas the one just above the substrate holder of M-ICP was similar to that of ICP when a weak (<8 G) magnetic field was employed. As a result, radical densities in M-ICP were higher than those in ICP and the etch rate of oxide in M-ICP was faster than that in ICP without severe electron charging in 90 nm high aspect ratio contact hole etch.

• OSTI ID: 22479705
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 4 Vol. 33; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ASPECT RATIO
COMPARATIVE EVALUATIONS
ELECTRON TEMPERATURE
MAGNETIC FIELDS
OXIDES
PLASMA DENSITY
RADICALS
SPATIAL DISTRIBUTION
SUBSTRATES