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Title: High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering

Abstract

Highlights: • High-quality PMN-PT 90/10 RFE thin films were prepared by RF magnetron sputtering. • The maximum discharged density of 31.3 J/cm{sup 3} was obtained in the 750-nm-thick film. • PMN-PT RFE films might be a promising material for energy-storage application. - Abstract: 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO{sub 3}/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated that the thin films had crystallized into a pure perovskite phase with a (100)-preferred orientation after annealed at 700 °C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3 J/cm{sup 3} was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application.

Authors:
; ; ;
Publication Date:
OSTI Identifier:
22475759
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 65; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRACKS; DEPOSITION; DIELECTRIC PROPERTIES; ENERGY STORAGE; FERROELECTRIC MATERIALS; GRAIN ORIENTATION; LEAD COMPOUNDS; MAGNESIUM COMPOUNDS; MAGNETRONS; NIOBATES; NIOBIUM COMPOUNDS; OXYGEN COMPOUNDS; PERFORMANCE; PEROVSKITE; SPECTRA; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Wang, Xiaolin, Zhang, Le, Hao, Xihong, E-mail: xhhao@imust.cn, and An, Shengli. High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2015.01.038.
Wang, Xiaolin, Zhang, Le, Hao, Xihong, E-mail: xhhao@imust.cn, & An, Shengli. High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering. United States. doi:10.1016/J.MATERRESBULL.2015.01.038.
Wang, Xiaolin, Zhang, Le, Hao, Xihong, E-mail: xhhao@imust.cn, and An, Shengli. Fri . "High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering". United States. doi:10.1016/J.MATERRESBULL.2015.01.038.
@article{osti_22475759,
title = {High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering},
author = {Wang, Xiaolin and Zhang, Le and Hao, Xihong, E-mail: xhhao@imust.cn and An, Shengli},
abstractNote = {Highlights: • High-quality PMN-PT 90/10 RFE thin films were prepared by RF magnetron sputtering. • The maximum discharged density of 31.3 J/cm{sup 3} was obtained in the 750-nm-thick film. • PMN-PT RFE films might be a promising material for energy-storage application. - Abstract: 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO{sub 3}/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated that the thin films had crystallized into a pure perovskite phase with a (100)-preferred orientation after annealed at 700 °C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3 J/cm{sup 3} was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application.},
doi = {10.1016/J.MATERRESBULL.2015.01.038},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 65,
place = {United States},
year = {2015},
month = {5}
}