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Si(hhm) surfaces: Templates for developing nanostructures

Journal Article · · Semiconductors
;  [1]
  1. Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

The fabrication of ordered low-dimensional structures on clean and metal-atom-decorated stepped Si(557) and Si(556) surfaces is discussed. The formation conditions and atomic structure of regular step systems on clean Si(557) 7 × 7 and Si(556) 7 × 7 surfaces are studied. The atomic structure of stepped Si(hhm), Ag/Si(557), and Gd/Si(557) surfaces is studied using high-resolution scanning tunneling microscopy and low-energy electron diffraction. The possibility of fabricating 1D and 2D structures of gadolinium and silver atoms on the Si(557) surface is demonstrated.

OSTI ID:
22469902
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 49; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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