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Title: Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation

Journal Article · · Semiconductors
 [1];  [2]
  1. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
  2. Lobachevsky State University of Nizhni Novgorod, Physicotechnical Research Institute (Russian Federation)

It is demonstrated that the efficiency of surface plasmon-polariton excitation at a metal-semiconductor interface by active quantum dots can be determined from measurements of the polarization characteristics of the output radiation. Experimentally, the proposed diagnostic method is based on finding the ratio of the intensities of the output radiation with polarizations orthogonal and parallel to the nanoheterostructure plane for two different distances between the quantum-dot layer and the metal-semiconductor interface. These data are then used to obtain the unknown parameters in the proposed mathematical model which makes it possible to calculate the rate of surface plasmon-polariton excitation by active quantum dots. As a result, this rate can be determined without complicated expensive equipment for fast time-resolved measurements.

OSTI ID:
22469897
Journal Information:
Semiconductors, Vol. 49, Issue 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English