Behavior of the Fe impurity in Hg{sup 3}In{sup 2}Te{sup 6} crystals
- Fed’kovich National University (Ukraine)
Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at E{sup c}–0.69 eV in Hg{sup 3}In{sup 2}Te{sup 6} crystals. When light is absorbed by Fe{sup 2+} impurity centers, both electronic transitions of the impurity-level–conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe{sup 2+} centers.
- OSTI ID:
- 22469841
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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