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Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Journal Article · · Semiconductors
;  [1]
  1. National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)
Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.
OSTI ID:
22469839
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 49; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English