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On the cascade capture of electrons at donors in GaAs quantum wells

Journal Article · · Semiconductors
The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.
OSTI ID:
22469795
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 49; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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