On the cascade capture of electrons at donors in GaAs quantum wells
The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.
- OSTI ID:
- 22469795
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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