Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615120039· OSTI ID:22469666

Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Harus, G. I.; Shelushinina, N. G.; Yakunin, M. V. ^[1]; Mikhailov, N. N.; Dvoretsky, S. A. ^[2]

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1. Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation)
2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The longitudinal and Hall magnetoresistances of HgTe/HgCdTe heterostructures with an inverted energy spectrum (the HgTe quantum well width is d = 20.3 nm) are measured in the quantum-Hall-effect regime at T = 2–50 K in magnetic fields up to B = 9 T. Analysis of the temperature dependences of conductivity in the transition region between the first and second plateaus of the quantum Hall effect shows the feasibility of the scaling regime for a plateau–plateau quantum phase transition in 2D-structures on the basis of mercury telluride.

• OSTI ID: 22469666
• Journal Information: Semiconductors, Vol. 49, Issue 12; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
ENERGY SPECTRA
HALL EFFECT
MAGNETIC FIELDS
MAGNETORESISTANCE
MERCURY
MERCURY TELLURIDES
PHASE TRANSFORMATIONS
QUANTUM WELLS
TEMPERATURE DEPENDENCE