Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures
- “Technological Center” Research-and-Production Company (Russian Federation)
- Russian Academy of Sciences, Institute of Nanotechnologies in Microelectronics (Russian Federation)
New methods for silicon nanostructuring and the possibility of raising the aspect ratios of the structures being formed are considered. It is shown that the technology developed relates to self-formation methods and is an efficient tool for improving the quality of field-emission cathodes based on carbon nanotubes (CNTs) by increasing the Si–CNT contact area and raising the efficiency of the heat sink.
- OSTI ID:
- 22469658
- Journal Information:
- Semiconductors, Vol. 49, Issue 13; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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