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Title: Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics

Abstract

We report the photochemical atomic layer deposition of Al{sub 2}O{sub 3} thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60°C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al{sub 2}O{sub 3} films exhibit dielectric constants of 8 – 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD.

Authors:
; ; ; ; ;  [1]
  1. Centre for Materials and Structures, University of Liverpool, Liverpool, L69 3GH (United Kingdom)
Publication Date:
OSTI Identifier:
22454421
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 5; Journal Issue: 1; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ALUMINIUM OXIDES; DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; IRRADIATION; MAGNESIUM FLUORIDES; OXYGEN; PERMITTIVITY; SHUTTERS; SUBSTRATES; THIN FILMS

Citation Formats

Chalker, P. R., E-mail: pchalker@liverpool.ac.uk, Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., and Potter, R. J.. Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics. United States: N. p., 2015. Web. doi:10.1063/1.4905887.
Chalker, P. R., E-mail: pchalker@liverpool.ac.uk, Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., & Potter, R. J.. Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics. United States. doi:10.1063/1.4905887.
Chalker, P. R., E-mail: pchalker@liverpool.ac.uk, Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., and Potter, R. J.. Thu . "Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics". United States. doi:10.1063/1.4905887.
@article{osti_22454421,
title = {Vacuum ultraviolet photochemical selective area atomic layer deposition of Al{sub 2}O{sub 3} dielectrics},
author = {Chalker, P. R., E-mail: pchalker@liverpool.ac.uk and Marshall, P. A. and Dawson, K. and Brunell, I. F. and Sutcliffe, C. J. and Potter, R. J.},
abstractNote = {We report the photochemical atomic layer deposition of Al{sub 2}O{sub 3} thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60°C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al{sub 2}O{sub 3} films exhibit dielectric constants of 8 – 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD.},
doi = {10.1063/1.4905887},
journal = {AIP Advances},
number = 1,
volume = 5,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}