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Title: Synthesis of new Ga{sub 7}Ge{sub 3}Te{sub 11}—One-dimensional phase in Ga–Ge–Te ternary system: Crystal structure and physical properties

Journal Article · · Journal of Solid State Chemistry
 [1];  [2]; ;  [1]; ;  [3]
  1. University of Pardubice, Faculty of Chemical Technology, Studentska 573, 53210 Pardubice (Czech Republic)
  2. Charles University, Faculty of Science, Albertov 6, 128 43 Prague 2 (Czech Republic)
  3. Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 3, 121 16 Praha 2 (Czech Republic)

Ga{sub 7}Ge{sub 3}Te{sub 11} single crystals were grown using transport in a temperature gradient. The prepared single crystals have a needle-like appearance, 1 to 40 μm in diameter and 2 to 20 mm in length. The Ga{sub 7}Ge{sub 3}Te{sub 11} single crystals were characterized by both single crystalline and powder X-ray diffraction. The structure consists of one-dimensional molecular strings bonded together through tellurium atoms by a weak bond of the van der Waals type. A large unit cell volume indicates the complexity of the structure. The room temperature theoretical density is 5.73 g cm{sup −3}. The compound shows semiconducting properties and possesses peculiar magnetic properties. - Graphical abstract: 1D Ga{sub 7}Ge{sub 3}Te{sub 11} - cross-view of the molecular string. - Highlights: • We prepared and characterized novel compound Ga{sub 7}Ge{sub 3}Te{sub 11}in single crystalline form. • Ga{sub 7}Ge{sub 3}Te{sub 11} is one-dimensional structure; orthorhombic lattice; space group Pnma. • Ga{sub 7}Ge{sub 3}Te{sub 11} is an intrinsic semiconductor; E{sub g}≅0.7 eV. • Ga{sub 7}Ge{sub 3}Te{sub 11} is paramagnetic with an effective magnetic moment of p{sub eff}=0.06 μ{sub B} per atom. • Crossover from para – to diamagnetism is observed in field dependence of susceptibility.

OSTI ID:
22443545
Journal Information:
Journal of Solid State Chemistry, Vol. 222; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English