Nuclear Reaction Models Responsible for Simulation of Neutron-induced Soft Errors in Microelectronics

Journal Article · Sun Jun 15 00:00:00 EDT 2014 · Nuclear Data Sheets

DOI:https://doi.org/10.1016/J.NDS.2014.07.060· OSTI ID:22436737

Abe, S.

Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule.

• OSTI ID: 22436737
• Journal Information: Nuclear Data Sheets, Vol. 120; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0090-3752
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
COSMIC RADIATION
HYDROGEN IONS
MEV RANGE 100-1000
MEV RANGE 10-100
MICROELECTRONICS
MONTE CARLO METHOD
MOSFET
NEUTRONS
NUCLEAR REACTIONS