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Title: Suppression of metastable-phase inclusion in N-polar (0001{sup ¯}) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Abstract

The metastable zincblende (ZB) phase in N-polar (0001{sup ¯}) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

Authors:
; ;  [1]; ; ; ; ;  [1];  [2]
  1. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi (Japan)
  2. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi (Japan)
Publication Date:
OSTI Identifier:
22423739
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFRACTION; GALLIUM NITRIDES; INCLUSIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM WELLS; VAPOR PHASE EPITAXY; ZINC SULFIDES

Citation Formats

Shojiki, Kanako, Iwabuchi, Takuya, Kuboya, Shigeyuki, Choi, Jung-Hun, Tanikawa, Tomoyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi, CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, and Usami, Noritaka. Suppression of metastable-phase inclusion in N-polar (0001{sup ¯}) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4922131.
Shojiki, Kanako, Iwabuchi, Takuya, Kuboya, Shigeyuki, Choi, Jung-Hun, Tanikawa, Tomoyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi, CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, & Usami, Noritaka. Suppression of metastable-phase inclusion in N-polar (0001{sup ¯}) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy. United States. doi:10.1063/1.4922131.
Shojiki, Kanako, Iwabuchi, Takuya, Kuboya, Shigeyuki, Choi, Jung-Hun, Tanikawa, Tomoyuki, Hanada, Takashi, Katayama, Ryuji, Matsuoka, Takashi, CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, and Usami, Noritaka. Mon . "Suppression of metastable-phase inclusion in N-polar (0001{sup ¯}) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy". United States. doi:10.1063/1.4922131.
@article{osti_22423739,
title = {Suppression of metastable-phase inclusion in N-polar (0001{sup ¯}) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy},
author = {Shojiki, Kanako and Iwabuchi, Takuya and Kuboya, Shigeyuki and Choi, Jung-Hun and Tanikawa, Tomoyuki and Hanada, Takashi and Katayama, Ryuji and Matsuoka, Takashi and CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama and Usami, Noritaka},
abstractNote = {The metastable zincblende (ZB) phase in N-polar (0001{sup ¯}) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.},
doi = {10.1063/1.4922131},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 106,
place = {United States},
year = {2015},
month = {6}
}